Photodiodes providing standard and custom solutions for leading technologies and industries

Silicon Annular Quadrant Backscatter Detectors

OSI Optoelectronics introduces its new ‘Annular Quadrant Backscatter Detectors ‘ available in TO-5 and TO-8 metal packages. Devices sensitive from 350nm to 1100nm. The 200um Laser drilled hole on the chap and the header make it ideal for coupling with LC ferrule.

Back Illuminated SMT Photodiodes

The BI-SMT product series are single channel back-illuminated photodiodes specifically designed to minimize 'dead' areas at the edge of the device. Each device is designed on a package with dimensions very similar to the chip itself. This design allows for multiple detectors to be arranged in a tiled format and offers ease of coupling to a scintillator.

800nm Optimized Silicon Avalanche Photodiodes

OSI Optoelectronics introduces its new ‘800nm optimized Silicon APD Series’ available in hermetic metal packages. Devices offer lower noise and high sensitivity over bandwidths up to 1GHz. Devices exhibit low Temperature Coefficient 0.45 V/˚C.

Planar Diffused Photodiodes

Planar Diffused photodiodes offer lower capacitance and higher risetimes compared to the Inversion Layer photodiodes. These devices also exhibit linearity of photocurrent up to higher light outputs.

Planar Diffused IR Supressed Photodiodes

Planar Diffused photodiodes offer lower capacitance and higher risetimes compared to the Inversion Layer photodiodes. These devices also exhibit linearity of photocurrent up to higher light outputs. The IR sesitivty of these devices is supressed to minimize ambient light interference.